 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Available in ammo-pack. k a BAS11; BAS12 These packages are hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. DESCRIPTION Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. MAM196 Marking code BAS11: S11. Marking code BAS12: S12. Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BAS11 BAS12 VRWM working reverse voltage BAS11 BAS12 VR continuous reverse voltage BAS11 BAS12 IF(AV) average forward current averaged over any 20 ms period; Ttp = 75 C; lead length = 10 mm; see Figs 2 and 4 averaged over any 20 ms period; Tamb = 30 C; PCB mounting (see Fig.8); see Figs 3 and 4 IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax t = 10 s square wave; f = 50 Hz; Tamb = 25 C - - - 300 400 350 V V mA - - 300 400 V V PARAMETER repetitive peak reverse voltage - - 300 400 V V CONDITIONS MIN. MAX. UNIT - 300 mA - 4 A PRRM Tstg Tj repetitive peak reverse power dissipation storage temperature junction temperature - -65 -65 75 +150 +150 W C C 1996 Sep 26 2 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BAS11 BAS12 IR trr reverse current reverse recovery time VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 125 C; see Fig.6 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.9 VR = 0 V; f = 1 MHz; see Fig.7 CONDITIONS IF = 300 mA; Tj = Tjmax; see Fig.5 IF = 300 mA; see Fig.5 IR = 0.1 mA 330 440 - - - MIN. - - BAS11; BAS12 TYP. - - MAX. 1.0 1.1 V V UNIT - - - - - - - 250 10 1 V V nA A s Cd diode capacitance - 20 - pF THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.8. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 180 340 UNIT K/W K/W 1996 Sep 26 3 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers GRAPHICAL DATA MGD293 BAS11; BAS12 handbook, halfpage 0.6 handbook, halfpage 0.4 MGD295 IF(AV) (A) IF(AV) (A) 0.3 0.4 0.2 0.2 0.1 0 0 40 80 120 Lead length 10 mm. a = 1.57; VR = VRRMmax; = 0.5. 200 160 Ttp (oC) 0 0 40 80 120 Device mounted as shown in Fig.8. a = 1.57; VR = VRRMmax; = 0.5. 200 160 Tamb (C) Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGD292 MGD294 handbook, halfpage 0.5 handbook, halfpage 5 P (W) 0.4 a=3 2.5 2 1.57 1.42 IF (A) 4 0.3 3 0.2 2 0.1 1 0 0 0.1 0.2 0.3 0.4 IF(AV)(A) 0 0 1 2 VF (V) 3 a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Solid line: Tj = 25 C. Dotted line: Tj = 150 C. Fig.5 Forward current as a function of forward voltage; maximum values. 1996 Sep 26 4 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 102 handbook, halfpage IR (A) MGD297 handbook, halfpage 10 MGD296 - 1 Cd (pF) 10 1 10-1 0 50 100 150 Tj (oC) 200 1 10-1 1 10 102 VR(V) 103 VR = VRRMmax. f = 1 MHz; Tj = 25 C. Fig.6 Reverse current as a function of junction temperature; maximum values. Fig.7 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 50 25 7 50 2 3 MGA200 Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. 1996 Sep 26 5 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.9 Test circuit and reverse recovery time waveform and definition. 1996 Sep 26 6 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers PACKAGE OUTLINE BAS11; BAS12 handbook, full pagewidth 3.5 max 0.55 max 1.7 max 29 min 3.0 max 29 min MBC053 Dimensions in mm. The marking band indicates the cathode. Fig.10 SOD91. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 26 7 Not recommended for new designs |
Price & Availability of BAS12
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |